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| SFP13N50 P13N50 Silicon N-Channel MOSFET Features 13A,500V, RDS(on)(Max0.46)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ,Tstg TL Junction and Storage Temperature Channel Temperature 1.56 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) (Note2) (Note1) (Note3) (Note1) 8 52 30 845 5 3.5 195 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 500 13 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.64 62.5 Units /W /W /W Rev.A Oct.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. SFP13N50 SFP13 P13N50 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=30V,VDS=0V IG=10 A,VDS=0V VDS=500V,VGS=0V Min 30 - Type - Max 100 1 10 Unit nA V A A V V/ V S Drain cut -off current IDSS VDS=400V,TC=125 Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS BVDSS/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg ID=250 A,VGS=0V ID=250A,Referenced 500 - 0.5 0.37 15 1580 180 20 25 100 130 100 43 7.5 18.5 4.5 0.46 2055 235 25 60 210 to 25 VDS=10V,ID=250 A VGS=10V,ID=6.5A VDS=50V,ID=6.5A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=13A RG=9.1 RD=31 VDD=400V, VGS=10V, nC ID=13A (Note4,5) 56 (Note4,5) 3 - pF ns 270 210 plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=13A,VGS=0V IDR=13A,VGS=0V, dIDR / dt =100 A / s Min - Type 442 2.16 Max 13 52 1.4 633 3.24 Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH IAS=13A,VDD=50V,RG=0,Starting TJ=25 3.ISD13A,di/dt300A/us,VDD Steady, all for your advance SFP13N50 SFP13 P13N50 Fig.1 On State Characteristics Fig.2 Transfer Characteristics Fig.3 Capacitance Variation vs Drain Voltage Fig.4 Maximum Avalanche Energy vs On-State Current Fig.5 On-Resistance Variation vs Junction temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance SFP13N50 SFP13 P13N50 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case temperature Fig.9 Transient thermal Response Curve 4/7 Steady, all for your advance SFP13N50 SFP13 P13N50 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance SFP13N50 SFP13 P13N50 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance SFP13N50 SFP13 P13N50 TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance |
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